Powering CFETs From The Backside
- 發佈日期 : 2024-03-22
- 資料來源：Semiconductor Engineering
- 瀏覽人次：17
Next-gen transistors will benefit from the new power delivery scheme, but there are plenty of challenges ahead.
The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs) that vertically integrate stacked NFET and PFET devices.
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